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RN2710 - Silicon PNP Epitaxial Type Transistor

Download the RN2710 datasheet PDF (RN2711 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon pnp epitaxial type transistor.

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Note: The manufacturer provides a single datasheet file (RN2711-Toshiba.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Toshiba
  • RN2710JE - Silicon PNP Epitaxial Type Transistor
  • RN2711 - Silicon PNP Epitaxial Type Transistor
  • RN2711JE - Silicon PNP Epitaxial Type Transistor
  • RN2712JE - Silicon PNP Epitaxial Type Transistor
  • RN2713JE - Silicon PNP Epitaxial Type Transistor
  • RN2714 - Silicon PNP Epitaxial Type Transistor
  • RN2701 - Silicon PNP Epitaxial Type Transistor
  • RN2701JE - Silicon PNP Epitaxial Type Transistor

Full PDF Text Transcription

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RN2710,RN2711 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2710, RN2711 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit  Including two devices in USV (ultra super mini type with 5 leads)  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN1710 and RN1711 Equivalent Circuit USV JEDEC ― JEITA ― TOSHIBA 2-2L1A Weight: 6.2 mg (typ.
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