RN2710
RN2710,RN2711
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN2710, RN2711
Unit: mm
Switching, Inverter Circuit, Interface Circuit and Driver Circuit
- Including two devices in USV (ultra super mini type with 5 leads)
- With built-in bias resistors
- Simplify circuit design
- Reduce a quantity of parts and manufacturing process and miniaturize equipment.
- Various resistance values are available to suit various circuit designs.
- plementary to RN1710 and RN1711
Equivalent Circuit
JEDEC
―
JEITA
―
TOSHIBA
2-2L1A
Weight: 6.2 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon)
Characteristic
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC PC- Tj Tstg
- 50
- 50
- 5
- 100 m A
200 m W
°C
- 55 to...
