RN2714
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
Switching, Inverter Circuit, Interface Circuit and Driver Circuit
Unit: mm
- Two devices incorporated in a USV (5-pin ultra-super-mini-type)
- With built-in bias resistors
- Simplify circuit design
- Reduce a quantity of parts and manufacturing process and miniaturize equipment.
Equivalent Circuit
R1 B
R2
R1: 1.0 kΩ (Q1, Q2 mon) R2: 10 kΩ (Q1, Q2 mon)
Absolute Maximum Ratings (Ta = 25˚C) (Q1, Q2 mon)
JEDEC
―
JEITA
―
TOSHIBA
2-2L1A
Weight: 6.2 mg (typ.)
Characteristic
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range
VCBO
-50
VCEO
-50
VEBO
-5
-100 m A
PC (Note 1)
200 m...
