S2000 - Silicon NPN Transistor

Toshiba

Datasheet Details

. High Voltage : VCES=1500V . Low Saturation Voltage : VcE(sat)=5V (Max. ) . Fall Time : t f =0.7/ts (Typ. ) . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 03.6±.

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Published: Jul 16, 2018 |