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S2000 - Silicon NPN Transistor

Key Features

  • . High Voltage : VCES=1500V . Low Saturation Voltage : VcE(sat)=5V (Max. ) . Fall Time : t f =0.7/ts (Typ. ) . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 03.6±.

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Datasheet Details

Part number S2000
Manufacturer Toshiba
File Size 82.47 KB
Description Silicon NPN Transistor
Datasheet download datasheet S2000 Datasheet

Full PDF Text Transcription for S2000 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for S2000. For precise diagrams, and layout, please refer to the original PDF.

S2000 SILICON NPNTRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. COLOR TV SWITCHING REGULATOR APPLICATIONS. FEATURES . High Voltage : VCES=1500V . Low ...

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NG REGULATOR APPLICATIONS. FEATURES . High Voltage : VCES=1500V . Low Saturation Voltage : VcE(sat)=5V (Max.) . Fall Time : t f =0.7/ts (Typ.) . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 03.6±<12 , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current (Peak) Total Power Dissipation (Tc^95°C) Junction Temperature Storage Temperature Range Thermal Resistance SYMBOL VCES VeBO ic ICM X BM Ptot L stg Rth(j-c) RATING 1500 7.5 12.5 +115 -55-115 1.6 UNIT 1. BASE 2. COLLECTOR(HEAT SINK) 3. EMITTER TOSHIBA 2-16D1A Weight : 5.