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S2000AF - High voltage NPN Power transistor

General Description

The S2000AF is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure for updated performance to the Horizontal Deflection stage.

Key Features

  • State-of-the-art technology:.
  • Diffused collector “Enhanced generation” Stable performances versus operating temperature variation Low base-drive requirement Tigh hFE range at operating collector current High ruggedness Fully insulated power package U. L. compliant In compliance with the 2002/93/EC European directive 1 2 3 ISOWATT218FX.

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www.DataSheet4U.com S2000AF High voltage NPN Power transistor for standard Definition CRT display Preliminary Data Features ■ ■ ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “Enhanced generation” Stable performances versus operating temperature variation Low base-drive requirement Tigh hFE range at operating collector current High ruggedness Fully insulated power package U.L. compliant In compliance with the 2002/93/EC European directive 1 2 3 ISOWATT218FX Applications ■ ■ Internal schematic diagram Horizontal deflection output for CRT TV Switch mode power supplies for CRT TV Description The S2000AF is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure for updated performance to the Horizontal Deflection stage.