S2000A
S2000A is Silicon NPN Transistor manufactured by Toshiba.
Features
. High Voltage
: VCES=1500V
. Low Saturation Voltage : Vc E ( sat )=l V (Max.)
. Fall Time
: tf=0.7/is (Typ.)
. Glass Passivated Collector-Base Junction
Unit in mm rl&OMAX. <Zta.6±Q.2
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Peak
Base Current (Peak)
Total Power Dissipation (Tc^95°C)
Junction Temperature
Storage Temperature Range
Thermal Resistance
SYMBOL VCES VEBO ic ICM L BM tot
-stg R th(j-c)
RATING 1500
12.5 +115 -55~ +115
UNIT 'C/W
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
TOSHIBA
2-16D1A
Weight : 5.2g
ELECTRICAL CHARACTERISTICS (Tti=25°C)
CHARACTERISTIC...
