S2000 - Silicon NPN Transistor

Toshiba

Key Features

. High Voltage : VCES=1500V . Low Saturation Voltage : VcE(sat)=5V (Max. ) . Fall Time : t f =0.7/ts (Typ. ) . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 03.6±.

S2000 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	S2000
Manufacturer	Toshiba
File Size	82.47 KB
Description	Silicon NPN Transistor
Datasheet	S2000 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S2000 SILICON NPNTRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. COLOR TV SWITCHING REGULATOR APPLICATIONS. FEATURES . High Voltage : VCES=1500V . Low Saturation Voltage : VcE(sat)=5V (Max.) . Fall Time : t f =0.7/ts (Typ.) . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 03.6±<12 , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current (Peak) Total Power Dissipation (Tc^95°C) Junction Temperature Storage Temperature Range Thermal Resistance SYMBOL VCES VeBO ic ICM X BM Ptot L stg Rth(j-c) RATING 1500 7.5 12.5 +115 -55-115 1.6 UNIT 1. BASE 2. COLLECTOR(HEAT SINK) 3. EMITTER TOSHIBA 2-16D1A Weight : 5.