S2055 - Silicon NPN Transistor

Toshiba

Datasheet Details

. High Voltage v C es=1500V . Low Saturation Voltage VCE(sat)=lV(Max. ) . Fall Time tf=0.7/ts (Typ. ) . Built-in Damper Type . Glass Passivated Collector-Base Junction (S2055A) Unit in mm 1&OMAX. 03.6±d2.

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Published: Jul 16, 2018 |