S2055AF Overview
Key Specifications
Description
With TO-3P(H)IS package - High voltage ;high speed - Built-in damper diode APPLICATIONS - Horizontal deflection for color TV PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 5 8 15 50 150 -55~150 UNIT V V V A A W SYMBOL Rth j-C PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA ;IB=0 IC=4.5A ;IB=2.0A IC=4.5A ;IB=2.0A VCE=1500V; VBE=0 TC=125 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=5V;f=5MHz 8 7 MIN 700 S2055AF SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE fT TYP. MAX UNIT V 1.0 1.3 1 2 300 V V mA mA MHz Switching times inductive load ts tf Storage time Fall time 7 0.55 µs µs IC=4.5A ; hFE=2.5; VCC=140V LC=0.9mH; LB=3µH 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE S2055AF Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3.
