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S2055A - Silicon NPN Transistor

Download the S2055A datasheet PDF. This datasheet also covers the S2055 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • . High Voltage v C es=1500V . Low Saturation Voltage VCE(sat)=lV(Max. ) . Fall Time tf=0.7/ts (Typ. ) . Built-in Damper Type . Glass Passivated Collector-Base Junction (S2055A) Unit in mm 1&OMAX. 03.6±d2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (S2055-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number S2055A
Manufacturer Toshiba
File Size 43.87 KB
Description Silicon NPN Transistor
Datasheet download datasheet S2055A Datasheet

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Other Datasheets by Toshiba

Part Number Description
S2055AF Silicon NPN Triple Diffused Type TRANSISTOR
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S2055N Color TV Horizontal Output Applications
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
: SILICON NPN TRIPLE DIFFUSED MESA TYPE S2U55 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage v C es=1500V . Low Saturation Voltage VCE(sat)=lV(Max.) . Fall Time tf=0.7/ts (Typ.) . Built-in Damper Type . Glass Passivated Collector-Base Junction (S2055A) Unit in mm 1&OMAX. 03.6±d2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1500 V Emitter-Base Voltage VEBO Collector Current DC Peak ic JCM 7.5 Base Current (Peak) Total Power Dissipation (Tc^95°C) Junction Temperature Storage Temperature Range Thermal Resistance EQUIVALENT CIRCUIT IBM tot Ti Tstg R th(j-c) 12.5 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER +115 JEDEC -65-115 EIAJ TOSHIBA 2-16D1A 1.6 C/W Weight : 5 .