S2056 - Silicon NPN Transistor

Toshiba

Key Features

. High Voltage : VC ES=1500V . High Speed : tf=0.75/is (Typ. ) . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 0£6±O.2 ,.

S2056 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	S2056
Manufacturer	Toshiba
File Size	43.76 KB
Description	Silicon NPN Transistor
Datasheet	S2056 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN TRIPLE DIFFUSED MESA TYPE TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage : VC ES=1500V . High Speed : tf=0.75/is (Typ.) . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 0£6±O.2 , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage (VBE=0V) Collector-Emitter Voltage (RBE=10QQ) Transient Collector-Emitter Voltage (Flash-over) Collector-Emitter Voltage (Open Base) Collector Current DC Peak Transient Collector Current (Flash-over) Base Current (Peak) Reverse Base Current DC Peak Collector Power Dissipation (Tc^ 90°C) Junction Temperature Storage Temperature Range SYMBOL VCES RATING 1500 UNIT VCER 1500 VCE (Flash-over) 1650 VCEO 700 ic 2.5 ICM IC (Flash-over IBM -IB -IBM 2.5 100 1.