S2055 - Silicon NPN Transistor

Toshiba

Key Features

. High Voltage v C es=1500V . Low Saturation Voltage VCE(sat)=lV(Max. ) . Fall Time tf=0.7/ts (Typ. ) . Built-in Damper Type . Glass Passivated Collector-Base Junction (S2055A) Unit in mm 1&OMAX. 03.6±d2.

S2055 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	S2055
Manufacturer	Toshiba
File Size	43.87 KB
Description	Silicon NPN Transistor
Datasheet	S2055 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN TRIPLE DIFFUSED MESA TYPE S2U55 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage v C es=1500V . Low Saturation Voltage VCE(sat)=lV(Max.) . Fall Time tf=0.7/ts (Typ.) . Built-in Damper Type . Glass Passivated Collector-Base Junction (S2055A) Unit in mm 1&OMAX. 03.6±d2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1500 V Emitter-Base Voltage VEBO Collector Current DC Peak ic JCM 7.5 Base Current (Peak) Total Power Dissipation (Tc^95°C) Junction Temperature Storage Temperature Range Thermal Resistance EQUIVALENT CIRCUIT IBM tot Ti Tstg R th(j-c) 12.5 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER +115 JEDEC -65-115 EIAJ TOSHIBA 2-16D1A 1.6 C/W Weight : 5 .