S2055A Datasheet and Specifications PDF

The S2055A is a SILICON POWER TRANSISTOR.

Key Specifications

Part NumberS2055A Datasheet
ManufacturerSavantIC
Overview ·With TO-3PH package ·High voltage ,high speed ·Low collector saturation voltage ·Built-in damper diode APPLICATIONS ·Color TV horizontal output applications ·Color TV switching regulator applications. N S2055A SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IB=500mA ;VBE=-1.7V;L=40mH IC=4.5A ;IB=2A IC=4.5A ;IB=1.0A VCB=1500V; VBE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.1A ; VCE=10V 700 V VCE(sat) VBE(sat) ICBO IE.
Part NumberS2055A Datasheet
DescriptionSilicon NPN Transistor
ManufacturerToshiba
Overview : SILICON NPN TRIPLE DIFFUSED MESA TYPE S2U55 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage v C es=1500V . Low Saturation Voltage VCE(sat)=lV(Max.) . Fall Time tf=0.7/ts (Ty. . High Voltage v C es=1500V . Low Saturation Voltage VCE(sat)=lV(Max.) . Fall Time tf=0.7/ts (Typ.) . Built-in Damper Type . Glass Passivated Collector-Base Junction (S2055A) Unit in mm 1&OMAX. 03.6±d2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage.
Part NumberS2055A Datasheet
DescriptionSILICON DIFFUSED POWER TRANSISTOR
ManufacturerWS
Overview SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode , primarily for use in horizontal deflection circuites of co. Base current peak value Total power dissipation Tmb 25 Storage temperature Junction temperature MIN MAX 1500 600 5 8 4 6 125 150 150 UNIT V V V A A A W et4U.com VCESM VCEO VEBO IC IB IBM Ptot Tstg Tj -55 ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf PARAME.

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