Datasheet Summary
MOSFETs Silicon N-Channel MOS
1. Applications
- Battery protection circuits
2. Features
(1) Low source-source on-resistance : RSS(ON) = 2.2 mΩ (typ.) (@VGS = 3.8 V) : RSS(ON) = 2.1 mΩ (typ.) (@VGS = 4.5 V)
(2) RoHS patible (Note 1) (3) Halogen-free Note 1: The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
3. Packaging and Pin Assignment
TCSPAC-153001
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Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2020-11
2023-10-10 Rev.5.0
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