SSM3J56ACT mosfet equivalent, silicon p-channel mosfet.
(1) 1.2 V drive (2) Low drain-source on-resistance
: RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) .
* High-Speed Switching
2. Features
(1) 1.2 V drive (2) Low drain-source on-resistance
: RDS(ON) = 390 mΩ (max) (@VGS.
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