SSM3J56ACT Datasheet Silicon P-Channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon P-Channel MOS SSM3J56ACT 1. Applications • High-Speed Switching 2.

Datasheet Details

(1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V) 3. Packaging and Pin Assignment CST3 SSM3J56ACT 1: Gate 2: Source 3: Drain ©2015-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-11 2022-11-25 Rev.3.0 SSM3J56ACT 4. Absolute Maximum Ratings (Note) (Un.

Brand Logo	Part Number	Description	Manufacturer
	SSM3J56MFV	Silicon P-Channel MOSFET	Toshiba Semiconductor