SSM3J56ACT - Silicon P-Channel MOSFET

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Toshiba

Part number	SSM3J56ACT
Manufacturer	Toshiba
File Size	305.26 KB
Description	Silicon P-Channel MOSFET
Datasheet	SSM3J56ACT Datasheet
Additional preview pages of the SSM3J56ACT datasheet.

(1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V) 3. Packaging and Pin Assignment CST3 SSM3J56ACT 1: Gate 2: Source 3: Drain ©2015-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-11 2022-11-25 Rev.3.0 SSM3J56ACT 4. Absolute Maximum Ratings (Note) (Un.

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Published: Jun 22, 2019 |