Power Management Switch High Speed Switching Applications
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SSM3J56MFV
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J56MFV
○ Load Switching Applications
• • 1.2 V drive Low ON-resistance:RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID (Note 1) IDP (Note 1) PD (Note 2) Power dissipation Channel temperature Storage temperature range PD (Note 3) t < 5s Tch Tstg Rating -20 ±8 -800 -1600 150 500 800 150 −55 to 150 °C °C mW Unit V V mA 1.Gate 2.Source 3.Drain
VESM
JEDEC ― Note: Using continuously under heavy loads (e.g.
SSM3J56MFV Datasheet
