SSM3J56ACT
SSM3J56ACT is Silicon P-Channel MOSFET manufactured by Toshiba.
MOSFETs Silicon P-Channel MOS
1. Applications
- High-Speed Switching
2. Features
(1) 1.2 V drive (2) Low drain-source on-resistance
: RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V)
3. Packaging and Pin Assignment
CST3
1: Gate 2: Source 3: Drain
©2015-2022
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2015-11
2022-11-25 Rev.3.0
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