Datasheet Summary
MOSFETs Silicon N-Channel MOS
1. Applications
- Load Switches
- Ultra-High-Speed Switching
2. Features
(1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance
RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 107 mΩ (max) (@VGS = 10 V)
3. Packaging and Pin Assignment
SOT-23F
1: Gate 2: Source 3: Drain
©2016 Toshiba Corporation
Start of mercial production
2015-02
2016-08-23 Rev.2.0
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