SSM3K318R - Silicon N-Channel MOSFET

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Toshiba

Part number	SSM3K318R
Manufacturer	Toshiba
File Size	226.85 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K318R Datasheet
Additional preview pages of the SSM3K318R datasheet.

(1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 107 mΩ (max) (@VGS = 10 V) 3. Packaging and Pin Assignment SOT-23F SSM3K318R 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2015-02 2016-08-23 Rev.2.0 SSM3K318R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20.

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Published: Dec 14, 2023 |