SSM3K318R mosfet equivalent, silicon n-channel mosfet.
(1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance
RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 107 mΩ (max) (@VGS = 10 V)
3. Packaging and Pin Assignmen.
* Load Switches
* Ultra-High-Speed Switching
2. Features
(1) 4.5-V gate drive voltage. (2) Low drain-source on-r.
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