SSM3K318T Description
SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K318T ○ Load Switching Applications ○ High-Speed Switching Applications 4.5 V drive Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) : RDS(ON) = 107 mΩ (max) (@VGS = 10 V) +0.2 2.8-0.3 +0.2 1.6-0.1 Unit:.