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SSM3K316T www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K316T
Power Management Switch Applications High-Speed Switching Applications
• • 1.8-V drive Low ON-resistance: Ron = 131 mΩ (max) (@VGS = 1.8 V) Ron = 87 mΩ (max) (@VGS = 2.5 V) Ron = 65 mΩ (max) (@VGS = 4.5 V) Ron = 53 mΩ (max) (@VGS = 10 V) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse ID Symbol VDSS VGSS (Note 1) IDP (Note 1) PD (Note 2) t = 10s Tch Tstg Rating 30 ± 12 4.0 8.0 700 1250 150 −55 to 150 Unit V V A mW °C °C
Note:
Using continuously under heavy loads (e.g.
SSM3K316T Datasheet
