SSM3K316T Overview
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K316T Power Management Switch Applications High-Speed Switching Applications 1.8-V drive Low ON-resistance: Ron = 131 mΩ (max) (@VGS = 1.8 V) Ron = 87 mΩ (max) (@VGS = 2.5 V) Ron = 65 mΩ (max) (@VGS = 4.5 V) Ron = 53 mΩ (max) (@VGS = 10 V) Unit: Using continuously under heavy loads (e.g.