SSM3K315T Description
SSM3K315T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K315T ○ High-Speed Switching Applications 4.5-V drive Low ON-resistance : Ron = 41.5 mΩ (max) (@VGS = 4.5 V) : Ron = 27.6 mΩ (max) (@VGS = 10 V) Ratings (Ta = 25°C) +0.2 2.8-0.3 +0.2 1.6-0.1 Unit:.