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SSM3K310T
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
SSM3K310T
High-Speed Switching Applications
• 1.5 V drive • Low ON-resistance:
Ron = 66 mΩ (max) (@VGS = 1.5 V) Ron = 43 mΩ (max) (@VGS = 1.8 V)
Ron = 32 mΩ (max) (@VGS = 2.5 V) Ron = 28 mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
20
V
Gate-Source voltage
VGSS
± 10
V
Drain current
DC Pulse
Drain power dissipation
Channel temperature
Storage temperature range
ID
5.0 A
IDP
10.0
PD (Note 1)
700
mW
Tch
150
°C
Tstg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM3K310T Datasheet
