Datasheet4U Logo Datasheet4U.com

SSM3K318R - Silicon N-Channel MOSFET

Key Features

  • (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 107 mΩ (max) (@VGS = 10 V) 3. Packaging and Pin Assignment SOT-23F SSM3K318R 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2015-02 2016-08-23 Rev.2.0 SSM3K318R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20.

📥 Download Datasheet

Datasheet Details

Part number SSM3K318R
Manufacturer Toshiba
File Size 226.85 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM3K318R Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSM3K318T Silicon N-Channel MOSFET Toshiba Semiconductor
SSM3K318T N-Channel 60V MOSFET VBsemi
SSM3K310T Silicon N-Channel MOSFET Toshiba Semiconductor
SSM3K315T Silicon N-Channel MOSFET Toshiba Semiconductor
SSM3K316T MOSFET Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
SSM3K320T Silicon N-Channel MOSFET
SSM3K337R Silicon N-Channel MOSFET
SSM3K339R Silicon N-Channel MOSFET
SSM3K341R Silicon N-Channel MOSFET
SSM3K341TU Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-Channel MOS SSM3K318R 1. Applications • Load Switches • Ultra-High-Speed Switching 2. Features (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 107 mΩ (max) (@VGS = 10 V) 3. Packaging and Pin Assignment SOT-23F SSM3K318R 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2015-02 2016-08-23 Rev.2.0 SSM3K318R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 Drain current (Note 1) ID 2.