SSM3K318T Datasheet and Specifications PDF

The SSM3K318T is a Silicon N-Channel MOSFET.

Key Specifications

Part NumberSSM3K318T Datasheet
ManufacturerToshiba
Overview SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K318T ○ Load Switching Applications ○ High-Speed Switching Applications • 4.5 V drive • Low ON-resistance : RDS(ON). ent/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the TSM JEDEC JEITA 2: Source 3: Drain ― ― Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. .
Part NumberSSM3K318T Datasheet
DescriptionN-Channel 60V MOSFET
ManufacturerVBsemi
Overview SSM3K318T-VB SSM3K318T-VB Datasheet N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60 0.086 at VGS = 4.5 V ID (A)a 4.0 3.8 Qg (Typ.) 2.1 nC .
* Halogen-free According to IEC 61249-2-21 Available
* Trench Power MOSFET
* 100 % Rg Tested
* 100 % UIS Tested APPLICATIONS
* Battery Switch
* DC/DC Converter D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Vol.

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