* ESD protected gate
* Low ON-resistance RDS(on) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(on) = 3.1 Ω (typ.) (@VGS = 5.

Silicon N-Channel MOS Type Field-Effect Transistor

T2N7002BK

T2N4401

T2-1T-KK81

T2-1T-KK81+

T20-250

T2000BB45G

T2001N

T200QFE-V44-F

T200XW01

T200XW02

T200XW02-V0

T200XW02-V1

T201N

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