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T2N7002AK - Silicon N-Channel MOS Type Field-Effect Transistor

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T2N7002AK TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type T2N7002AK ○ High Speed Switching Applications • ESD protected gate • Low ON-resistance RDS(on) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(on) = 3.1 Ω (typ.) (@VGS = 5 V) RDS(on) = 3.2 Ω (typ.) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Gate–source voltage Drain current (Note1) DC Pulse Power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDP (Note 2) PD (Note 3) PD (Note 4) Tch Tstg Rating 60 ± 20 200 760 320 1000 150 −55 to 150 Unit V V mA mW °C °C SOT23 1. Gate 2. Source 3. Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
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