T2N7002BK mosfets equivalent, silicon n-channel mosfets.
(1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance
: RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.
* High-Speed Switching
2. Features
(1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance
: RDS(ON) = 1.05 Ω (ty.
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