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TB67S101AFNG - PHASE-in controlled Bipolar Stepping Motor Driver

Download the TB67S101AFNG datasheet PDF. This datasheet also covers the TB67S101AFG variant, as both devices belong to the same phase-in controlled bipolar stepping motor driver family and are provided as variant models within a single manufacturer datasheet.

Features

  • BiCD process integrated monolithic IC. Capable of controlling 1 bipolar stepping motor. PWM controlled constant-current drive. Allows full, half, quarter step operation. Low on-resistance (High + Low side=0.49Ω(typ)) MOSFET output stage. High efficiency motor current control mechanism (Advanced Dynamic Mixed Decay) High voltage and current (For specification, please refer to absolute maximum ratings and operation ranges) Built-in error detection circuits (Thermal shutdown (TSD), over-current shu.

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Note: The manufacturer provides a single datasheet file (TB67S101AFG-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TB67S101AFNG
Manufacturer Toshiba
File Size 1.37 MB
Description PHASE-in controlled Bipolar Stepping Motor Driver
Datasheet download datasheet TB67S101AFNG Datasheet

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Other Datasheets by Toshiba

Part Number Description
TB67S101AFG PHASE-in controlled Bipolar Stepping Motor Driver
TB67S101AFTG PHASE-in controlled Bipolar Stepping Motor Driver
TB67S101ANG PHASE-in controlled Bipolar Stepping Motor Driver
TB67S102AFG CLOCK-in controlled Bipolar Stepping Motor Driver
TB67S102AFNG CLOCK-in controlled Bipolar Stepping Motor Driver

Full PDF Text Transcription

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TB67S101AFG/FTG/FNG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB67S101AFG, TB67S101AFTG, TB67S101AFNG PHASE-in controlled Bipolar Stepping Motor Driver FG The TB67S101A is a two-phase bipolar stepping motor driver using a PWM chopper. An interface is PHASE in control. Fabricated with the BiCD process, rating is 50 V/4.0 A . Features BiCD process integrated monolithic IC. Capable of controlling 1 bipolar stepping motor. PWM controlled constant-current drive. Allows full, half, quarter step operation. Low on-resistance (High + Low side=0.49Ω(typ)) MOSFET output stage.
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