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TC518129AFTL-10LV Datasheet SILICON GATE CMOS PSEUDO STATIC RAM

Manufacturer: Toshiba

Download the TC518129AFTL-10LV datasheet PDF. This datasheet also includes the TC518129APL-80LV variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (TC518129APL-80LV-Toshiba.pdf) that lists specifications for multiple related part numbers.

General Description

The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits.

The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.

The TC518129A-LV operates from a single power supply of 3.135V - 5.5V Refreshing is supported by a refresh (RFSro input which enables two types of refreshing - auto refresh and self refresh.

Overview

TOSHIBA TC5I8I29APLIAFLIAFWL-80LVII0LVI I2LV TC5I8I29AF1L-80LVII0LVI I2LV SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC.

Key Features

  • a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface. A CS standby mode interface is incorporated in the TC518129A-LV family, with the CE2 pin in the TC518128A-LV family changed to a CS pin. The TC518129A-LV is available in a 32-pin, 0.6 inch width plastic.

More Datasheets from Toshiba

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TC518129AFTL-80LV SILICON GATE CMOS PSEUDO STATIC RAM
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