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TC518129AFWI-10 Datasheet SILICON GATE CMOS PSEUDO STATIC RAM

Manufacturer: Toshiba

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General Description

The TC518129AFWI is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits.

The TC518129AFWI utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.

The TC518129AFWI operates from a single 5V power supply.

Overview

TOSHIBA 1l:518129~-10 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC.

Key Features

  • a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of R!W thus simplifying the microprocessor interface. A CS standby mode interface is incorporated in the TC518129AFWI, with the CE2 pin in the TC518128A family changed to a CS pin. The TC518129AFWI is guaranteed over an operating temperature range of -40 - 85°C so the TC518129AFWI is suitable for use in wide operatin.

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