TC518129BFTL-10V, TC518129BPL-70V Datasheet (Toshiba) - SILICON GATE CMOS PSEUDO STATIC RAM

TC518129BFTL-10V - SILICON GATE CMOS PSEUDO STATIC RAM

The TC518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129B-V operates from a single power su

TC518129BFTL-10V Features

* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. A CS standby mode interface is incorporated in the TC518129B-V family, with the CE2 pin in the TC518128B-V family changed to

TC518129BFTL-10V, TC518129BPL-70V Datasheet - Toshiba

TC518129BFTL-10V - SILICON GATE CMOS PSEUDO STATIC RAM

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