TC518512FI-10 Datasheet SILICON GATE CMOS PSEUDO STATIC RAM

Manufacturer: Toshiba

Download the TC518512FI-10 datasheet PDF. This datasheet also includes the TC518512PI-80 variant, as both parts are published together in a single manufacturer document.

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TC518512FI-10 silicon gate cmos pseudo static ram by Toshiba - Datasheet Preview — Note: The manufacturer provides a single datasheet file (TC518512PI-80-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	TC518512FI-10
Manufacturer	Toshiba
File Size	277.58 KB
Description	SILICON GATE CMOS PSEUDO STATIC RAM
Datasheet	TC518512FI-10 Datasheet

General Description

The TC518512PI is a 4M bit high speed CMOS pseudo static RAMorganized as 524,288 words by 8 bits.

The TC518512PI utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacityJ:!!,9h speed and low power storage.

The TC518512PI operates from a single 5V power supply.

Overview

TOSHIBA SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM.

Key Features

a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface. The TC518512PI is guaranteed over an operating temperature range of -40 - 85°C. The TC518512PI is available in a 32-pin, 0.6 inch width plastic DIP and a small outline plastic flat package. Features.
Organization: 524,288 words x 8 bits.
Single 5V power supp.

More Datasheets from Toshiba

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TC518512FI-80	SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FL-10	SILICON GATE CMOS PSEUDO STATIC RAM
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TC518512FL-70LT	SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FL-70LV	SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FL-80	SILICON GATE CMOS PSEUDO STATIC RAM