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TC518512FTL-70DR Datasheet SILICON GATE CMOS PSEUDO STATIC RAM

Manufacturer: Toshiba

Download the TC518512FTL-70DR datasheet PDF. This datasheet also includes the TC518512PL-70DR variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (TC518512PL-70DR-Toshiba.pdf) that lists specifications for multiple related part numbers.

General Description

The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.

The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!J!gh speed and low power storage.

The TC518512PL operates from a single 5V power supply.

Overview

rOSHIBA TC518512PL/FL/FIL/TRL-70(DR) /80 (DR) /10 (DR) SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC.

Key Features

  • a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a thin small outline package (forward type, reverse type). Features.
  • Organization: 524,288 words x 8 bits.
  • Single 5V p.

More Datasheets from Toshiba

Part Number Description
TC518512FTL-70 SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-70LT SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-70LV SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-10 SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-10DR SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-10LT SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-10LV SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-80 SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-80DR SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-80LT SILICON GATE CMOS PSEUDO STATIC RAM