TC518512FTL-10DR - SILICON GATE CMOS PSEUDO STATIC RAM

This page provides the datasheet information for the TC518512FTL-10DR, a member of the TC518512PL-70DR SILICON GATE CMOS PSEUDO STATIC RAM family.

Product Overview

Toshiba

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Datasheet Details

Part number	TC518512FTL-10DR
Manufacturer	Toshiba
File Size	315.88 KB
Description	SILICON GATE CMOS PSEUDO STATIC RAM
Datasheet	TC518512FTL-10DR Datasheet
Additional preview pages of the TC518512FTL-10DR datasheet.

TC518512FTL-10DR Product details

Description

The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.

The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!J!gh speed and low power storage.

Features

a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a thin small outline package (forward type, reverse type). Features.
Organization: 524,288 words x 8 bits.
Single 5V p.

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Other Datasheets by Toshiba

TC518512FTL-10 - SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-10LT - SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-10LV - SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-70 - SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-70DR - SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-70LT - SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-70LV - SILICON GATE CMOS PSEUDO STATIC RAM
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Published: Feb 15, 2017 |