TC518512FTL-10LV Overview
The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed ar}QJow power storage. The TC518512PL-LVoperates from a single 3.0V - 5.5V power supply.
TC518512FTL-10LV Key Features
- Organization: 524,288 words x 8 bits
- Low voltage op