TC51V8512AF-12 Datasheet (Toshiba) - SILICON GATE CMOS PSEUDO STATIC RAM

TC51V8512AF-12, SILICON GATE CMOS PSEUDO STATIC RAM

The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high s~ed and low power storage. The TC51 V8512AF operates from a single 3.0V pow

TC51V8512AF-12 Features

* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface. The TC51V8512AF is available in a 32-pin small outline plastic flat package, and a thin small outline package (forward type,