TC51V8512AF-12 Key Features
- Organization: 524,288 words x 8 bits
- Low voltage function: 3.0V±10%
- Data re
- Part: TC51V8512AF-12
- Manufacturer: Toshiba (official site)
- Size: 301.13 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| TC51V8512AF-15 | SILICON GATE CMOS PSEUDO STATIC RAM |
| TC51V8512AFT-12 | SILICON GATE CMOS PSEUDO STATIC RAM |
| TC51V8512AFT-15 | SILICON GATE CMOS PSEUDO STATIC RAM |
| TC51V8512ATR-12 | SILICON GATE CMOS PSEUDO STATIC RAM |
| TC51V8512ATR-15 | SILICON GATE CMOS PSEUDO STATIC RAM |
TC51V8512AF-12 Description
The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high s~ed and low power storage. The TC51 V8512AF operates from a single 3.0V power supply.