Datasheet4U Logo Datasheet4U.com

TC51V8512ATR-15 Datasheet SILICON GATE CMOS PSEUDO STATIC RAM

Manufacturer: Toshiba

Download the TC51V8512ATR-15 datasheet PDF. This datasheet also includes the TC51V8512AF-12 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC51V8512AF-12-Toshiba.pdf) that lists specifications for multiple related part numbers.

General Description

The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.

The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high s~ed and low power storage.

The TC51 V8512AF operates from a single 3.0V power supply.

Overview

rOSHIBA SILICON GATE CMOS TC51V8512AF/ AFT/ A1R-12/15 PRELIMINARY 524,288 WORD x 8 BIT CMOS PSEUDO STATIC.

Key Features

  • a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface. The TC51V8512AF is available in a 32-pin small outline plastic flat package, and a thin small outline package (forward type, reverse type). Features.
  • Organization: 524,288 words x 8 bits.
  • Low voltage function: 3.0V±10%.
  • Data re.

More Datasheets from Toshiba

Part Number Description
TC51V8512ATR-12 SILICON GATE CMOS PSEUDO STATIC RAM
TC51V8512AF-12 SILICON GATE CMOS PSEUDO STATIC RAM
TC51V8512AF-15 SILICON GATE CMOS PSEUDO STATIC RAM
TC51V8512AFT-12 SILICON GATE CMOS PSEUDO STATIC RAM
TC51V8512AFT-15 SILICON GATE CMOS PSEUDO STATIC RAM
TC51V4260DFTS DRAM
TC51V4260DFTS-60 DRAM
TC51V4260DFTS-70 DRAM
TC51V4265DFTS DRAM
TC51V4265DFTS-60 DRAM