TC51V8512ATR-15 Datasheet, Toshiba

a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor inter.

The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high s~ed and low power storage.