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TC55257BFL-10 Datasheet, Toshiba

TC55257BFL-10 ram equivalent, silicon gate cmos static ram.

TC55257BFL-10 Avg. rating / M : 1.0 rating-14

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TC55257BFL-10 Datasheet

Features and benefits

with an operating current of 5mNMHz fup.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the stand.

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TC55257BFL-10 Page 1 TC55257BFL-10 Page 2 TC55257BFL-10 Page 3

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