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TC55416P-35 - CMOS STATIC RAM

Download the TC55416P-35 datasheet PDF. This datasheet also covers the TC55416P variant, as both devices belong to the same cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The TC55416P is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5-volt supply.

Features

  • with a maximum access time of 35ns/45ns and maximum operating current of 80mA/60mA at minimum cycle time. The TC55416P also features an automatic stand-by mode. When deselected by Chip Enable (CE), the operating current is reduced to lOrnA. The TC55416P is suitable for use in cache memory and high speed storage, where high speed/high density are required. The TC55416P is molded in a 22 pin standard plastic package with 0.3 inch width for high density assembly. The TC55416P is fabricated with ion.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC55416P-Toshiba.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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TOSHIBA MOS MEMORY PRODUCT 16,384 WORD X 4 BIT CMOS STATIC RAM SILICON GATE CMOS TC55416P-35 TC55416P-45 DESCRIPTION The TC55416P is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum access time of 35ns/45ns and maximum operating current of 80mA/60mA at minimum cycle time. The TC55416P also features an automatic stand-by mode. When deselected by Chip Enable (CE), the operating current is reduced to lOrnA. The TC55416P is suitable for use in cache memory and high speed storage, where high speed/high density are required.
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