Datasheet Summary
TOSHIBA
1l:55B329P/]-10/12
SILICON GATE BiCMOS
32,768 WORD x 9 BIT BiCMOS STATIC RAM
Description
The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
The TC55B329P/J Features low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access.
The TC55B329P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TTL patible.
The TC55B329P/J is available in a 300mil...