Datasheet4U Logo Datasheet4U.com

TC55B329J - 32K x 9-Bit BiCMOS Static RAM

Download the TC55B329J datasheet PDF. This datasheet also covers the TC55B329P variant, as both devices belong to the same 32k x 9-bit bicmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply.

Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.

Features

  • low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access. The TC55B329P/J is suitable for use in high speed.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC55B329P_Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TC55B329J
Manufacturer Toshiba
File Size 228.24 KB
Description 32K x 9-Bit BiCMOS Static RAM
Datasheet download datasheet TC55B329J Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TC55B8128J-15 CMOS 1M-Bit Static RAM ETC
TC551001BFL-70L SILICON GATE CMOS STATIC RAM Toshiba Semiconductor
TC551001BFL-85L SILICON GATE CMOS STATIC RAM Toshiba Semiconductor
TC551001BFTL-70L SILICON GATE CMOS STATIC RAM Toshiba Semiconductor
TC551001BFTL-85L SILICON GATE CMOS STATIC RAM Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
TC55B329J-10 32K x 9-Bit BiCMOS Static RAM
TC55B329J-12 32K x 9-Bit BiCMOS Static RAM
TC55B329P 32K x 9-Bit BiCMOS Static RAM
TC55B329P-10 32K x 9-Bit BiCMOS Static RAM
TC55B329P-12 32K x 9-Bit BiCMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TOSHIBA 1l:55B329P/]-10/12 SILICON GATE BiCMOS 32,768 WORD x 9 BIT BiCMOS STATIC RAM Description The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation. The TC55B329P/J features low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access. The TC55B329P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TTL compatible. The TC55B329P/J is available in a 300mil width, 32-pin DIP and SOJ suitable for high density surface assembly.
Published: |