low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access. The TC55B329P/J is suitable f.

such as cache memory and high speed storage. All inputs and outputs are TTL compatible. The TC55B329P/J is available in .

The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation. The TC55B329.

TC55B329J-10

TC55B329J-12

TC55B329P

TC55B329P-10

TC55B329P-12

TC55B328J

TC55B328J-10

TC55B328J-12

TC55B328P

TC55B328P-10

TC55B328P-12

TC55B417J

TC55B417P