Description
The TC58BVG0S3HBAI6 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
Features
- Organization
x8
Memory cell array 2112 × 64K × 8
Register
2112× 8
Page size
2112 bytes
Block size
(128K + 4K) bytes.
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read.
- Mode control Serial input/output Command control.
- Number of valid blocks Min 1004 blocks Max 1024 blocks.
- Power supply VCC = 2.7V to 3.6V.
- Access time Cell array to register 40 µs typ. Serial Read Cycle 25 ns min (CL=.
TC58BVG0S3HBAI6 Datasheet
