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TC58BVG0S3HBAI4

TC58BVG0S3HBAI4 is 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM manufactured by Toshiba.
TC58BVG0S3HBAI4 datasheet preview

TC58BVG0S3HBAI4 Datasheet

Part number TC58BVG0S3HBAI4
Download TC58BVG0S3HBAI4 Datasheet (PDF)
File Size 303.39 KB
Manufacturer Toshiba
Description 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
TC58BVG0S3HBAI4 page 2 TC58BVG0S3HBAI4 page 3

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TC58BVG0S3HBAI4 Description

The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: The TC58BVG0S3HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

TC58BVG0S3HBAI4 Key Features

  • Organization
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
  • Mode control Serial input/output mand control
  • Number of valid blocks Min 1004 blocks Max 1024 blocks
  • Power supply VCC = 2.7V to 3.6V
  • Access time
  • Program/Erase time Auto Page Program Auto Block Erase
  • Operating current Read (25 ns cycle)
  • Package P-TFBGA63-0911-0.80CZ (Weight: 0.15 g typ.)
  • 8bit ECC for each 528Bytes is implemented on a chip

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