TC58BVG0S3HBAI6
Overview
The TC58BVG0S3HBAI6 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments.
- Organization x8 Memory cell array 2112 × 64K × 8 Register 2112× 8 Page size 2112 bytes Block size (128K + 4K) bytes
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read
- Mode control Serial input/output Command control
- Number of valid blocks Min 1004 blocks Max 1024 blocks
- Power supply VCC = 2.7V to 3.6V
- Access time Cell array to register 40 µs typ. Serial Read Cycle 25 ns min (CL=50pF)
- Program/Erase time Auto Page Program Auto Block Erase 330 µs/page typ. 2.5 ms/block typ.
- Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 mA max. 30 mA max 30 mA max 50 µA max
- Package P-VFBGA67-0608-0.80-001 (Weight: 0.095 g typ.)
- 8bit ECC for each 528Bytes is implemented on a chip. 1
