TC58NVG2S0HBAI6 Datasheet - Toshiba

TC58NVG2S0HBAI6 4G-BIT (512M x 8 BIT) CMOS NAND E2PROM

The TC58NVG2S0HBAI6 is a single 3.3V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks. The device has two 4352-byte static registers which allow program and read data to be transferred betwe.

TC58NVG2S0HBAI6 Features

* Organization x8 Memory cell array 4352 × 128K × 8 Register 4352 × 8 Page size 4352 bytes Block size (256K + 16K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

TC58NVG2S0HBAI6-Toshiba.pdf