Datasheet Summary
..
TC59SM716/08/04AFT/AFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
2,097,152-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION
TC59SM716AFT/AFTL is a CMOS synchronous dynamic random access memory organized as 2,097,152-words × 4 banks × 16 bits and TC59SM708AFT/AFTL is organized as 4,194,304 words × 4 banks × 8 bits and TC59SM704AFT/AFTL is organized as 8,388,608 words × 4 banks × 4 bits. Fully synchronous operations are referenced to the positive edges of clock input and can transfer data up to 143M...