TC59SM816CFTL Datasheet PDF - Toshiba (TC59SM804CFT - TC59SM816CFT) SDRAM Specs

TC59SM816CFTL - (TC59SM804CFT - TC59SM816CFT) SDRAM

This page provides the datasheet information for the TC59SM816CFTL, a member of the TC59SM816CFT (TC59SM804CFT - TC59SM816CFT) SDRAM family.

Datasheet Summary

Description

TC59SM816CFT/CFTL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808CFT/CFTL is organized as 8,388,608 words × 4 banks × 8 bits and The TC59SM804CFT/CFTL is organized as 16,777,216 words × 4 banks × 4 bits.

Datasheet Details

Part number	TC59SM816CFTL
Manufacturer	Toshiba
File Size	2.78 MB
Description	(TC59SM804CFT - TC59SM816CFT) SDRAM
Datasheet	TC59SM816CFTL Datasheet
Additional preview pages of the TC59SM816CFTL datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com TC59SM816/08/04CFT/CFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59SM816CFT/CFTL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808CFT/CFTL is organized as 8,388,608 words × 4 banks × 8 bits and The TC59SM804CFT/CFTL is organized as 16,777,216 words × 4 banks × 4 bits. Fully synchronous operations are referenced to the positive edges of clock input and can transfer data up to 143M words per second. These devices are controlled by commands setting.

Published: Aug 27, 2006 |