CMOS Digital Integrated Circuits Silicon Monolithic
TC74AC00FT
TC74AC00FT
1. Functional Description
• Quad 2-Input NAND Gate
2. General
The TC74AC00FT is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate and
double-layer metal wiring C2MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS
low power dissipation.
The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and
stable output.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features
(1) Wide operating temperature range: Topr = -40 to 125 (Note 1)
(2) High speed: tpd = 3.8 ns (typ.) VCC = 5.0 V
(3) Low power dissipation: ICC = 4.0 µA (max) Ta = 25
(4) High noise immunity: VNIH = VNIL = 28 % VCC (min)
(5) Output current: |IOH|/IOL = 24 mA (min) (VCC = 4.5 V)
(6) Balanced propagation delays: tPLH ≈ tPHL
(7) Wide operating voltage range: VCC(opr) = 2.0 V to 5.5 V
(8) Pin and function compatible with 74F00.
Note 1: Operating Range spec of Topr = -40 to 125 is applicable only for the products which manufactured after
January 2020.
4. Packaging
TSSOP14
©2020
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2020-01
2020-02-09
Rev.1.0
