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TC74AC00P - Quad 2-Input NAND Gate

Description

2.

The TC74AC00P is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology.

Features

  • (1) High speed: tpd = 3.8 ns (typ. ) VCC = 5.0 V (2) Low power dissipation: ICC = 4.0 µA (max) Ta = 25  (3) High noise immunity: VNIH = VNIL = 28 % VCC (min) (4) Output current: |IOH|/IOL = 24 mA (min) (VCC = 4.5 V) (5) Balanced propagation delays: tPLH ≈ tPHL (6) Wide operating voltage range: VCC(opr) = 2.0 V to 5.5 V (7) Pin and function compatible with 74F00. 4. Packaging DIP14 ©2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 1986-05 2020-02-18 Rev.1.

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Datasheet Details

Part number TC74AC00P
Manufacturer Toshiba
File Size 150.30 KB
Description Quad 2-Input NAND Gate
Datasheet download datasheet TC74AC00P Datasheet
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Full PDF Text Transcription

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CMOS Digital Integrated Circuits Silicon Monolithic TC74AC00P TC74AC00P 1. Functional Description • Quad 2-Input NAND Gate 2. General The TC74AC00P is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. 3. Features (1) High speed: tpd = 3.8 ns (typ.) VCC = 5.0 V (2) Low power dissipation: ICC = 4.
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