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Toshiba Electronic Components Datasheet

TC74ACT86P Datasheet

Quad Exclusive OR Gate

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TC74ACT86P/F
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74ACT86P, TC74ACT86F
Quad Exclusive OR Gate
The TC74ACT86 is an advanced high speed CMOS QUAD
EXCLUSIVE OR GATE fabricated with silicon gate and
double-layer metal wiring C2MOS technology.
It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.
This device may be used as a level converter for interfacing
TTL or NMOS to High Speed CMOS. The inputs are compatible
with TTL, NMOS and CMOS output voltage levels. The internal
circuit is includes on output buffer, which provide high noise
immunity and stable output.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Features
High speed: tpd = 5.0 ns (typ.) at VCC = 5 V
Low power dissipation: ICC = 4 μA (max) at Ta = 25°C
Compatible with TTL outputs: VIL = 0.8 V (max)
VIH = 2.0 V (min)
Symmetrical output impedance: |IOH| = IOL = 24 mA (min)
Capability of driving 50
transmission lines.
Balanced propagation delays: tpLH ∼− tpHL
Pin and function compatible with 74F86
Pin Assignment
TC74ACT86P
TC74ACT86F
Weight
DIP14-P-300-2.54
SOP14-P-300-1.27A
: 0.96 g (typ.)
: 0.18 g (typ.)
Start of commercial production
1988-10
1
2014-03-01


Toshiba Electronic Components Datasheet

TC74ACT86P Datasheet

Quad Exclusive OR Gate

No Preview Available !

IEC Logic Symbol
TC74ACT86P/F
Truth Table
A
B
Y
L
L
L
L
H
H
H
L
H
H
H
L
Absolute Maximum Ratings (Note 1)
Characteristics
Symbol
Rating
Unit
Supply voltage range
VCC
0.5 to 7.0
V
DC input voltage
VIN
0.5 to VCC + 0.5
V
DC output voltage
Input diode current
Output diode current
DC output current
VOUT
IIK
IOK
IOUT
0.5 to VCC + 0.5
V
±20
mA
±50
mA
±50
mA
DC VCC/ground current
ICC
±100
mA
Power dissipation
PD
500 (DIP) (Note 2)/180 (SOP)
mW
Storage temperature
Tstg
65 to 150
°C
Note 1:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = 40 to 65°C. From Ta = 65 to 85°C a derating factor of 10 mW/°C should be
applied up to 300 mW.
Operating Ranges (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
VCC
VIN
VOUT
Topr
dt/dV
4.5 to 5.5
0 to VCC
0 to VCC
40 to 85
0 to 10
V
V
V
°C
ns/V
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
2
2014-03-01


Part Number TC74ACT86P
Description Quad Exclusive OR Gate
Maker Toshiba
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TC74ACT86P Datasheet PDF






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