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Toshiba Electronic Components Datasheet

TC74HC133AF Datasheet

13-Input NAND Gate

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TC74HC133AP/AF
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74HC133AP, TC74HC133AF
13-Input NAND Gate
The TC74HC133A is a high speed CMOS 13-INPUT NAND
GATE fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
The internal circuit is composes of 7 stages, including a buffer
output, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Features
High speed: tpd = 13 ns (typ.) at VCC = 5 V
Low power dissipation: ICC = 1 μA (max) at Ta = 25°C
High noise immunity: VNIH = VNIL = 28% VCC (min)
Output drive capability: 10 LSTTL loads
Symmetrical output impedance: |IOH| = IOL = 4 mA (min)
Balanced propagation delays: tpLH ∼− tpHL
Wide operating voltage range: VCC (opr) = 2 to 6 V
Pin and function compatible with 74LS133
Pin Assignment
TC74HC133AP
TC74HC133AF
Weight
DIP16-P-300-2.54A
SOP16-P-300-1.27A
: 1.00 g (typ.)
: 0.18 g (typ.)
IEC Logic Symbol
Start of commercial production
1987-11
1
2014-03-01


Toshiba Electronic Components Datasheet

TC74HC133AF Datasheet

13-Input NAND Gate

No Preview Available !

Truth Table
Input
All Inputs High
All Other Combinations
Output
L
H
TC74HC133AP/AF
Absolute Maximum Ratings (Note 1)
Characteristics
Symbol
Rating
Unit
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC VCC/ground current
Power dissipation
Storage temperature
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
0.5 to 7
V
0.5 to VCC + 0.5
V
0.5 to VCC + 0.5
V
±20
mA
±20
mA
±25
mA
±50
mA
500 (DIP) (Note 2)/180 (SOP)
mW
65 to 150
°C
Note 1:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of 10 mW/°C shall be
applied until 300 mW.
Operating Ranges (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
VCC
VIN
VOUT
Topr
tr, tf
2 to 6
V
0 to VCC
V
0 to VCC
V
40 to 85
°C
0 to 1000 (VCC = 2.0 V)
0 to 500 (VCC = 4.5 V)
ns
0 to 400 (VCC = 6.0 V)
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
2
2014-03-01


Part Number TC74HC133AF
Description 13-Input NAND Gate
Maker Toshiba
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TC74HC133AF Datasheet PDF






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