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TC74VHC20F - Dual 4-Input NAND Gate

Features

  • High speed: tpd = 3.3 ns (typ. ) at VCC = 5 V.
  • Low power dissipation: ICC = 2 μA (max) at Ta = 25°C.
  • High noise immunity: VNIH = VNIL = 28% VCC (min).
  • Power down protection is provided on all inputs.
  • Balanced propagation delays: tpLH ≈ tpHL.
  • Wide operating voltage range: VCC (opr) = 2 to 5.5 V.
  • Pin and function compatible with 74ALS20 Weight SOP14-P-300-1.27A VSSOP14-P-0030-0.50 : 0.18 g (typ. ) : 0.02 g (typ. ) © 2019 1 Toshiba Electronic Devices & Storage.

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Full PDF Text Transcription (Reference)

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TC74VHC20F/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC20F, TC74VHC20FK Dual 4-Input NAND Gate The TC74VHC20 is an advanced high speed CMOS 4-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages including a buffer output, which provide high noise immunity and stable output. An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages.
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