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Toshiba Electronic Components Datasheet

TC75S103F Datasheet

Single Operational Amplifier

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TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TC75S103F
Single Operational Amplifier
Low supply current
TC75S103F
Features
Input, Output Full Range type (Rail to Rail)
Low supply current 100A (Typ.) @VDD=1.8V
Low Input offset voltage 1.5mV (Max) @VDD=1.8V
Wide Operating Voltage Range 1.8V to 5.5V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
VDD - VSS
6
V
Differential input voltage DVIN
6
V
Input voltage
VIN
VDD to VSS
V
Output voltage
VOUT VSS -0.3V to VDD +0.3V VSS + 6V V
Output current
IOUT
25
mA
Power dissipation
PD
200
mW
Operating temperature
Topr
-40 to 105
°C
Storage temperature
Tstg
-55 to 150
°C
SMV
Weight:
SMV (SOT-25)(SC-74A) :14 mg (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Operating Ratings (Ta = -40 to 105°C)
Characteristics
Supply voltage
Symbol
Rating
Unit
VDD - VSS
1.8 to 5.5
V
Note2: A higher load capacitance will increase the risk of voltage oscillation. Allow sufficient capacitance value
when designing your circuit and using this product to prevent voltage oscillation.
Note3: This device is sensitive to electrostatic discharge.
Please ensure equipment, operator and tools are adequately earthed when handling.
Start of commercial production
2020-09
© 2020
1
Toshiba Electronic Devices & Storage Corporation
2020-09-22


Toshiba Electronic Components Datasheet

TC75S103F Datasheet

Single Operational Amplifier

No Preview Available !

Marking (top view)
5
4
SA3
1
2
3
TC75S103F
Pin Assignment (top view)
VDD
IN (-)
5
4
-
+
1
2
3
OUT VSS IN (+)
Electrical Characteristics
DC Characteristics (VDD = 1.8V, VSS = GND, Ta = 25°C, VIN = VDD/2, unless otherwise noted.)
Characteristics
Symbol
Test
Circuit
Test Condition
Min Typ. Max Unit
Input offset voltage
Input offset voltage drift
Input offset current
Input bias current
Common mode input voltage
Voltage gain (open loop)
Maximum output voltage
Common mode input signal
rejection ratio
Supply voltage rejection ratio
Supply current
Source current
Sink current
VIO
VIOdrift
IIO
II
CMVIN
GV
VOH
VOL
CMRR
SVRR
IDD
Isource
Isink
RS = 1 k, RF = 100k
Ta = -40 to 105°C
1
RS = 1 k, RF = 100k
Ta = 25°C
1 RS = 1 k, RF = 100k
2
-
2
-
3 RS = 1 k, RF = 100k
-
-
4 RL 100 k
5 RL 100 k
3 VIN = 0 to 1.8V
1 VDD = 1.8 to 5.0V
6
-
7
-
8
-
-1.85 0.3 1.85
mV
-1.5 0.3 1.5
mV
-
1
-
V/°C
-
1
-
pA
-
1
-
pA
0
-
VDD
V
85 100
-
dB
1.7
-
-
V
-
-
0.1
60
80
-
dB
70
85
-
dB
-
100 165
A
1.2
2
-
mA
1
2
-
mA
AC Characteristics (VDD = 0.9 V, VSS = -0.9 V, Ta = 25°C)
Characteristics
Unity Gain Cross Frequency
Phase margin
Slew Rate
Symbol
fT
Φm
SR
Test
Circuit
-
-
-
Test Condition
-
-
-
Min Typ. Max
Unit
-
0.3
-
MHz
-
40
- degrees
-
0.52
-
V/s
© 2020
2
Toshiba Electronic Devices & Storage Corporation
2020-09-22


Part Number TC75S103F
Description Single Operational Amplifier
Maker Toshiba
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TC75S103F Datasheet PDF






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